Electrical and Optical Properties of Well-Aligned Ho3+-Doped ZnO Nanorods as an Alternative Transparent Conducting Oxide


JOM, vol.73, no.1, pp.395-403, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 73 Issue: 1
  • Publication Date: 2021
  • Doi Number: 10.1007/s11837-020-04483-z
  • Journal Name: JOM
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, ABI/INFORM, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.395-403
  • Kayseri University Affiliated: Yes


In this study, the impacts of doping concentration on the crystal structure, morphology, electrical, and optical properties of Ho3+-doped zinc oxide (ZnO) nanorod (NR) arrays were studied. Structural and morphological characterizations showed that the Ho3+-doped ZnO NRs were crystallized in the (002) direction, and that they had a homogeneous distribution on the substrate. The crystallite sizes of the samples were between 50 nm and 65 nm. SEM analysis showed that every sample was hexagonal in shape. For the 1 and 5 mol.% Ho3+-doped ZnO NRs, the values for electrical conductivity were found to be 1.41 x 10(-7) and 8.29 x 10(-6) (omega cm)(-1) at 25 degrees C and 1.70 x 10(-5) and 1.24 x 10(-3) (omega cm)(-1) at 300 degrees C, respectively. The optical transmittances were between 80 and 93% for all the samples in the region from 400 to 1000 nm. The optical band gap values were determined to be between 3.180 and 3.195 eV.