© 2022The electrical properties of Al/Mg2Si/p-Si Schottky diodes fabricated were examined at various frequencies and temperatures. The structural and surface morphological features of the interface layer (Mg2Si) were analyzed by XRD, SEM, and EDX. For the fabricated diode, temperature-dependent measurements were made in the range of 120–340 K with an increment of 20 K. The frequency-dependent measurements were also performed in the range of 1 kHz–5 MHz. For the Al/Mg2Si/p-Si Schottky diode, the temperature-dependence of ideality factor (n), saturation current (I0), zero-bias barrier height (ΦB0), serial resistance (Rs) and interface state density (Nss) were investigated. Besides, diffusion potential (VD), Fermi energy (EF), concentration of acceptor atoms (NA), the depletion layer width (WD) and frequency dependent obstacle height (ΦB0C–V) values were calculated from frequency dependent measurements. It was found that the Al/Mg2Si/p-Si Schottky diode is suitable for use in electronic applications in a wide temperature and frequency range.